LBC846BPDW1T1G Datasheet, PDF (1/11 Pages) Leshan Radio Company – Dual General Purpose Transistors

LESHAN RADIO COMPANY, LTD.
Dual General Purpose Transistors
NPN/PNP Duals (Complimentary)
These transistors are designed for general purpose amplifier
applications. They are housed in the SOT–363/SC–88 which is
designed for low power surface mount applications.
We declare that the material of product compliance with
RoHS requirements.
• Device Marking:
LBC846BPDW1T1G = BB
LBC847BPDW1T1G = 3F
LBC847CPDW1T1G = 3G LBC848BPDW1T1G = 13K
LBC848CPDW1T1G = 13L
ORDERING INFORMATION
Device
LBC846BPDW1T1G_S
LBC846BPDW1T3G_S
Shipping
3000 Units/Reel
10000 Units/Reel
LBC846BPDW1T1G
LBC847BPDW1T1G
LBC847CPDW1T1G
LBC848BPDW1T1G
LBC848CPDW1T1G
6
5
4
1
2
3
SOT-363/SC-88
CASE 419B STYLE 1
3
2
1
MAXIMUM RATINGS - NPN
Rating
Symbol LBC846 LBC847 LBC848 Unit
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
VCEO
65
45
30
V
VCBO
80
50
30
V
VEBO 6.0
6.0
5.0
V
Collector Current Ð
Continuous
IC
100 100 100 mAdc
MAXIMUM RATINGS - PNP
Rating
Symbol LBC846 LBC847 LBC848 Unit
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current Ð
Continuous
VCEO
VCBO
VEBO
IC
-65
-80
-5.0
-100
-45
-50
-5.0
-100
-30
-30
-5.0
-100
V
V
V
mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Total Device Dissipation
PD
Per Device
FR-5 Board ⁽¹⁾
TA = 25˚C
Derate Above 25˚C
Thermal Resistance,
Junction to Ambient
R_θJA
Junction and Storage
Temperature Range
TJ, Tstg
1. FR-5 = 1.0 x 0.75 x 0.062 in
Max
380
250
3.0
328
-55 to +150
Unit
mW
mW/˚C
˚C/W
˚C
Q₁
Q₂
4
5
6
DEVICE MARKING
See Table
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