LBC846BDW1T1 Datasheet, PDF (1/5 Pages) Leshan Radio Company – Dual General Purpose Transistors NPN Duals

LESHAN RADIO COMPANY, LTD.
Dual General Purpose Transistors
NPN Duals
These transistors are designed for general purpose amplifier
applications. They are housed in the SOT–363/SC–88 which is
designed for low power surface mount applications.
6
5
4
LBC846BDW1T1
LBC847BDW1T1
LBC847CDW1T1
LBC848BDW1T1
LBC848CDW1T1
Q₂
Q₁
1
2
3
See Table
MAXIMUM RATINGS
Rating
Symbol
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current -Continuous
V _CEO
V _CBO
V _EBO
I_C
BC846
65
80
6.0
100
BC847 BC848
45
30
50
30
6.0
5.0
100
100
Unit
V
V
V
mAdc
6
5
4
1
2
3
SOT-363 /SC-88
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation
Per Device
FR– 5 Board, (1) T_A = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
1. FR–5 = 1.0 x 0.75 x 0.062 in.
ORDERING INFORMATION
Device
LBC846BDW1T1
LBC847BDW1T1
LBC847CDW1T1
LBC848BDW1T1
LBC848CDW1T1
Package
SOT–363
SOT–363
SOT–363
SOT–363
SOT–363
Symbol
P_D
R _θJA
T _J , T _stg
Max
Unit
380
mW
250
mW
3.0
328
–55 to +150
mW/°C
°C/W
°C
Shipping
3000 Units/Reel
3000 Units/Reel
3000 Units/Reel
3000 Units/Reel
3000 Units/Reel
LBC846b–1/5