LBC846AWT1G_15 Datasheet, PDF (1/9 Pages) Leshan Radio Company – General Purpose Transistors

LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
NPN Silicon
We declare that the material of product compliance with RoHS requirements.
S- Prefix for Automotive and Other Applications Requiring Unique Site
and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
ORDERING INFORMATION ( Pb– Free ⁾
Device
LBC846AWT1G
S-LBC846AWT1G
LBC846AWT3G
S-LBC846AWT3G
Package
SC-70
SC-70
Shipping
3000/Tape&Reel
10000/Tape&Reel
MAXIMUM RATINGS
Rating
Symbol
Collector–Emitter Voltage
V _CEO
Collector–Base Voltage
V _CBO
Emitter–Base Voltage
V EBO
Collector Current — Continuous I _C
BC846
65
80
6.0
100
BC847
45
50
6.0
100
BC848
30
30
5.0
100
Unit
V
V
V
mAdc
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
P_D
R _θJA
T _J , T _stg
Max
Unit
150
mW
833
–55 to +150
°C/W
°C
LBC846AWT1G,BWT1G
LBC847AWT1G,BWT1G
CWT1G
LBC848AWT1G,BWT1G
CWT1G
S-LBC846AWT1G,BWT1G
S-LBC847AWT1G,BWT1G
CWT1G
S-LBC848AWT1G,BWT1G
CWT1G
3
1
2
SOT–323 /SC–70
3
COLLECTOR
1
BASE
2
EMITTER
DEVICE MARKING
LBC846AWT1G = 1A; LBC846BWT1G = 1B; LBC847AWT1G = 1E; LBC847BWT1G = 1F;
LBC847CWT1G = 1G; LBC848AWT1G = 1J; LBC848BWT1G = 1K; LBC848CWT1G = 1L;
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(I_C = 10 mA)
LBC846 Series
LBC847 Series
LBC848 Series
Collector–Emitter Breakdown Voltage
(I_C = 10 µA, V_EB = 0)
LBC846 Series
LBC847 Series
LBC848 Series
Collector–Base Breakdown Voltage
(I_C = 10 µA)
LBC846 Series
LBC847 Series
LBC848 Series
Emitter–Base Breakdown Voltage
(I_E = 1.0 µA)
LBC846 Series
LBC847 Series
LBC848 Series
Collector Cutoff Current (V_CB = 30 V)
(V_CB = 30 V, T_A = 150°C)
1.FR–5=1.0 x 0.75 x 0.062in
65
V _(BR)CEO
45
30
80
V _(BR)CES
50
30
80
V _(BR)CBO
50
30
6.0
V _(BR)EBO
6.0
5.0
I _CBO
—
—
Typ
Max Unit
—
—
—
—
v
—
—
—
—
—
—
v
—
—
—
—
—
—
v
—
—
—
—
—
—
v
—
—
—
15
nA
—
5.0
µA
Rev.O 1/9