LBC846AWT1 Datasheet, PDF (1/5 Pages) Leshan Radio Company – General Purpose Transistors NPN Silicon

LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
NPN Silicon
Pb– Free Package May be Available. The G.Suffix Denotes a
Pb– Free Lead Finish
ORDERING INFORMATION ( Pb– Free ⁾
Device
Package
LBC846AWT1G,BWT1G
LBC847AWT1G,BWT1G,CWT1G
LBC848AWT1G,BWT1G,CWT1G
SOT-323
SOT-323
SOT-323
Shipping
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
MAXIMUM RATINGS
Rating
Symbol
Collector–Emitter Voltage
Collector–Base Voltage
V _CEO
V _CBO
Emitter–Base Voltage
V _EBO
Collector Current — Continuous I _C
BC846
65
80
6.0
100
BC847
45
50
6.0
100
BC848
30
30
5.0
100
Unit
V
V
V
mAdc
LBC846AWT1,BWT1
LBC847AWT1,BWT1
CWT1
LBC848AWT1,BWT1
CWT1
3
1
2
SOT–323 /SC–70
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board, (1)
T_A = 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Junction and Storage Temperature
Symbol
P_D
R _θJA
P_D
T _J , T _stg
Max
Unit
150
mW
833
2.4
–55 to +150
°C/W
mW/°C
°C
1
BASE
3
COLLECTOR
2
EMITTER
DEVICE MARKING
LBC846AWT1 = 1A; LBC846BWT1 = 1B; LBC847AWT1 = 1E; LBC847BWT1 = 1F;
LBC847CWT1 = 1G; LBC848AWT1 = 1J; LBC848BWT1 = 1K; LBC848CWT1 = 1L
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(I_C = 10 mA)
LBC846 Series
LBC847 Series
LBC848 Series
Collector–Emitter Breakdown Voltage
(I_C = 10 µA, V_EB = 0)
LBC846 Series
LBC847 Series
LBC848 Series
Collector–Base Breakdown Voltage
(I_C = 10 µA)
LBC846 Series
LBC847 Series
LBC848 Series
Emitter–Base Breakdown Voltage
(I_E = 1.0 µA)
LBC846 Series
LBC847 Series
LBC848 Series
Collector Cutoff Current (V_CB = 30 V)
(V_CB = 30 V, T_A = 150°C)
1.FR–5=1.0 x 0.75 x 0.062in
65
V _(BR)CEO
45
30
80
V _(BR)CES
50
30
80
V _(BR)CBO
50
30
6.0
V _(BR)EBO
6.0
5.0
I _CBO
—
—
Typ
Max Unit
—
—
—
—
v
—
—
—
—
—
—
v
—
—
—
—
—
—
v
—
—
—
—
—
—
v
—
—
—
15
nA
—
5.0
µA
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