LBC817-25WT1G_15 Datasheet, PDF (1/3 Pages) Leshan Radio Company – General Purpose Transistors

LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
• We declare that the material of product compliance with RoHS requirements.
• S- Prefix for Automotive and Other Applications Requiring Unique Site
and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
LBC817-25WT1G
S-LBC817-25WT1G
MAXIMUM RATINGS
Rating
Symbol
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
V _CEO
V _CBO
V _EBO
Collector Current — Continuous I _C
Value
45
50
5.0
500
Unit
V
V
V
mAdc
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR- 5 Board (1)
T _A =25 °C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) T _A = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
P_D
Max
150
Unit
mW
R _θJA
P_D
1.2
mW/°C
833
°C/W
200
mW
R _θJA
T _J , T_stg
1.6
625
–55 to +150
mW/°C
°C/W
°C
DEVICE MARKING
LBC817–25W T1G = 6B
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(I_C = 10 mA)
Collector–Emitter Breakdown Voltage
(V_EB = 0, I_C = 10 µA)
Emitter–Base Breakdown Voltage
(I _E = 1.0 µA)
Collector Cutoff Current
(V_CB = 20 V)
(V_CB = 20 V, T_A = 150°C)
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
V _(BR)CEO
V _(BR)CES
V _(BR)EBO
I _CBO
45
—
50
—
5.0
—
—
—
—
—
3
1
2
SC-70
1
BASE
3
COLLECTOR
2
EMITTER
Max
Unit
—
V
—
V
—
V
100
nA
5.0
µA
Rev.O 1/3