LBC817-16LT1G_15 Datasheet, PDF (1/10 Pages) Leshan Radio Company – General Purpose Transistors

LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
NPN Silicon
• We declare that the material of product compliance with RoHS requirements.
• S- Prefix for Automotive and Other Applications Requiring Unique Site
and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
LBC817-16LT1G
LBC817-25LT1G
LBC817-40LT1G
S-LBC817-16LT1G
S-LBC817-25LT1G
S-LBC817-40LT1G
MAXIMUM RATINGS
Rating
Symbol
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
V _CEO
V _CBO
V _EBO
Collector Current — Continuous I _C
Value
45
50
5.0
500
Unit
V
V
V
mAdc
3
1
2
SOT–23
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board, (1)
T_A = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) T_A = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
P_D
R _θJA
P_D
R _θJA
T _J , T _stg
Max
Unit
225
mW
1.8
mW/°C
556
°C/W
300
2.4
417
–55 to +150
mW
mW/°C
°C/W
°C
1
BASE
3
COLLECTOR
2
EMITTER
DEVICE MARKING
LBC817–16LT1G = 6A; LBC817–25LT1G = 6B; LBC817–40LT1G = 6C
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(I_C = 10 mA)
V _(BR)CEO
45
Collector–Emitter Breakdown Voltage
(V_EB = 0, I_C = 10 µA)
V _(BR)CES
50
Emitter–Base Breakdown Voltage
(I _E = 1.0 µA)
V _(BR)EBO
5.0
Collector Cutoff Current
I _CBO
(V_CB = 20 V)
—
(V_CB = 20 V, T_A = 150°C)
—
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
Typ
Max
Unit
—
—
V
—
—
V
—
—
V
—
100
nA
—
5.0
µA
Rev.O 1/10