LBC817-16LT1 Datasheet, PDF (1/3 Pages) Leshan Radio Company – General Purpose Transistors NPN Silicon

LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
NPN Silicon
FEATURE
ƽCollector current capability I_C = 500 mA.
ƽCollector-emitter voltage V_CEO(max) = 45 V.
ƽGeneral purpose switching and amplification.
ƽPNP complement: LBC807 Series.
ƽPb-Free Package is available.
DEVICE MARKING AND ORDERING INFORMATION
Device
LBC817-16LT1
LBC817-16LT1G
LBC817-25LT1
LBC817-25LT1G
LBC817-40LT1
LBC817-40LT1G
Marking
6A
6A
(Pb-Free)
6B
6B
(Pb-Free)
6C
6C
(Pb-Free)
Shipping
3000/Tape&Reel
3000/Tape&Reel
3000/Tape&Reel
3000/Tape&Reel
3000/Tape&Reel
3000/Tape&Reel
MAXIMUM RATINGS
Rating
Symbol
Collector–Emitter Voltage
V _CEO
Collector–Base Voltage
V _CBO
Emitter–Base Voltage
V _EBO
Collector Current — Continuous I _C
Value
45
50
5.0
500
Unit
V
V
V
mAdc
LBC817-16LT1
LBC817-25LT1
LBC817-40LT1
3
1
2
SOT–23
1
BASE
3
COLLECTOR
2
EMITTER
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board, (1)
T_A = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) T_A = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
Symbol
P_D
R _θJA
P_D
R _θJA
T _J , T _stg
Max
Unit
225
mW
1.8
mW/°C
556
°C/W
300
2.4
417
–55 to +150
mW
mW/°C
°C/W
°C
LBC817_S-1/3