LBC817-16DMT1G Datasheet, PDF (1/3 Pages) Leshan Radio Company – Dual General Purpose Transistors NPN Duals

LESHAN RADIO COMPANY, LTD.
Dual General Purpose Transistors
NPN Duals
• We declare that the material of product compliance with RoHS requirements.
LBC817-16DMT1G
LBC817-25 DMT1G
LBC817-40DMT1G
MAXIMUM RATINGS
Rating
Symbol
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
V _CEO
V _CBO
V _EBO
Collector Current — Continuous I _C
Value
45
50
5.0
500
Unit
V
V
V
mAdc
SC-74
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board, (1)
T_A = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) T_A = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
Max
Unit
6
5
4
P_D
370
mW
Q₁
3.0
mW/°C
Q₂
R _θJA
P_D
333
°C/W
600
mW
1
2
3
4.8
mW/°C
R _θJA
T _J , T _stg
208
–55 to +150
°C/W
°C
DEVICE MARKING
LBC817–16 DMT1G = 6A; LBC817–25DMT1G = 6B; LBC817–40DMT1G = 6C
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(I_C = –10 mA)
Collector–Emitter Breakdown Voltage
(V_EB = 0, I_C = –10 µA)
Emitter–Base Breakdown Voltage
(I _E = –1.0 µA)
Collector Cutoff Current
(V_CB = 20 V)
(V_CB = 20 V, T_A = 150°C)
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
V _(BR)CEO
V _(BR)CES
V _(BR)EBO
I _CBO
45
—
50
—
5.0
—
—
—
—
—
Max
Unit
—
V
—
V
—
V
100
nA
5.0
µA
Rev.O 1/3