LBC807-40WT1G Datasheet, PDF (1/3 Pages) Leshan Radio Company – General Purpose Transistors PNP Silicon

LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
PNP Silicon
ƽ Pb-Free Package is available.
DEVICE MARKING AND ORDERING INFORMATION
Device
LBC807-40WT1G
Marking
YL
LBC807-40WT3G
YL
Package
SOT-323
SOT-323
Shipping
3000/Tape&Reel
10000/Tape&Reel
LBC807-40WT1G
3
MAXIMUM RATINGS
Rating
Symbol
Collector–Emitter Voltage
V _CEO
Collector–Base Voltage
V CBO
Emitter–Base Voltage
V _EBO
Collector Current — Continuous I _C
Value
–45
–50
–5.0
–500
Unit
V
V
V
mAdc
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR- 5 Board (1)
T _A =25 °C
Derate above 25°C
Symbol
P_D
Max
150
1.2
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) T _A = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
R _θJA
P_D
R _θJA
T _J , T_stg
833
200
1.6
625
–55 to +150
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise noted.)
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
Characteristic
Symbol
Min
Typ
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(I_C = –10 mA)
Collector–Emitter Breakdown Voltage
(V_EB = 0, I C = –10µA)
Emitter–Base Breakdown Voltage
(I_E = –1.0 µA)
Collector Cutoff Current
(V_CB = –20 V)
(V_CB = –20 V, T _J = 150°C)
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
V _(BR)CEO
V _(BR)CES
V _(BR)EBO
I _CBO
–45
—
–50
—
–5.0
—
—
—
—
—
1
2
SOT–323
1
BASE
3
COLLECTOR
2
EMITTER
Max
Unit
—
V
—
V
—
V
–100
nA
–5.0
µA
Rev.O 1/3