LBC807-25LT1G_15 Datasheet, PDF (1/10 Pages) LANSDALE Semiconductor Inc. – General Purpose Transistors

LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
PNP Silicon
FEATURE
ƽCollector current capability I_C = -500 mA.
ƽCollector-emitter voltage V_CEO(max) = -45 V.
ƽGeneral purpose switching and amplification.
ƽPNP complement: LBC807 Series.
ƽ We declare that the material of product compliance with RoHS requirements.
ƽ S- Prefix for Automotive and Other Applications Requiring Unique Site
and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
DEVICE MARKING AND ORDERING INFORMATION
Device
Marking
Shipping
LBC807-16LT1G
S-LBC807-16LT1G
5A1
3000/Tape&Reel
LBC807-16LT3G
S-LBC807-16LT3G
LBC807-25LT1G
S-LBC807-25LT1G
LBC807-25LT3G
S-LBC807-25LT3G
LBC807-40LT1G
S-LBC807-40LT1G
LBC807-40LT3G
S-LBC807-40LT3G
5A1
10000/Tape&Reel
5B1
3000/Tape&Reel
5B1
10000/Tape&Reel
5C1
3000/Tape&Reel
5C1
10000/Tape&Reel
LBC807-16LT1G
LBC807-25LT1G
LBC807-40LT1G
S-LBC807-16LT1G
S-LBC807-25LT1G
S-LBC807-40LT1G
3
1
2
SOT–23
1
BASE
3
COLLECTOR
2
EMITTER
MAXIMUM RATINGS
Rating
Symbol
Collector–Emitter Voltage
V _CEO
Collector–Base Voltage
V _CBO
Emitter–Base Voltage
V _EBO
Collector Current — Continuous I _C
Value
–45
–50
–5.0
–500
Unit
V
V
V
mAdc
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board, (1)
T_{A = 25°C}
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) T_{A = 25°C}
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
Symbol
P_D
R θJA
P_D
R θJA
T _{J , T stg}
Max
Unit
225
mW
1.8
mW/°C
556
°C/W
300
2.4
417
–55 to +150
mW
mW/°C
°C/W
°C
Rev.O 1/10