LBC807-16WT1G Datasheet, PDF (1/3 Pages) Leshan Radio Company – General Purpose Transistors PNP Silicon

LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
PNP Silicon
FEATURE
ƽCollector current capability I_C = -500 mA.
ƽCollector-emitter voltage V_CEO(max) = -45 V.
ƽGeneral purpose switching and amplification.
ƽPNP complement: LBC807 Series.
ƽWe declare that the material of product compliance with RoHS requirements.
DEVICE MARKING AND ORDERING INFORMATION
Device
LBC807-16WT1G
LBC807-16WT3G
Marking
5A
5A
Shipping
3000/Tape&Reel
10000/Tape&Reel
MAXIMUM RATINGS
Rating
Symbol
Collector–Emitter Voltage
V _CEO
Collector–Base Voltage
V _CBO
Emitter–Base Voltage
V _EBO
Collector Current — Continuous I _C
Value
–45
–50
–5.0
–500
Unit
V
V
V
mAdc
LBC807-16WT1G
3
1
2
SC-70
1
BASE
3
COLLECTOR
2
EMITTER
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR- 5 Board (1)
T _A =25 °C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) T _A = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
P_D
R _θJA
P_D
R _θJA
T _J , T_stg
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
Max
150
1.2
833
200
1.6
625
–55 to +150
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
Rev.O 1/3