LBAW56DW1T1G_15 Datasheet, PDF (1/3 Pages) Leshan Radio Company – Monolithic Dual Switching Diode

LESHAN RADIO COMPANY, LTD.
Monolithic Dual Switching Diode
Common Anode
Features
• We declare that the material of product
compliance with RoHS requirements.
z S- Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC-Q101
Qualified and PPAP Capable.
ORDERING INFORMATION
Device
PACKAGE
Shipping
LBAW56DW1T1G
S-LBAW56DW1T1G
6
5
4
LBAW56DW1T1G
S-LBAW56DW1T1G
LBAW56DW1T3G
S-LBAW56DW1T3G
SC88
SC88
3000 Tape & Reel
10000 Tape & Reel
1
2
3
SOT-363/SC-88
MAXIMUM RATINGS (EACH DIODE)
Rating
Symbol Value
Unit
1
6
Reverse Voltage
VR
70
Vdc
Forward Current
IF
200
mAdc
2
5
Peak Forward Surge Current
I FM(surge)
500
mAdc
THERMAL CHARACTERISTICS
3
4
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR– 4 Board, (1)
TA = 25°C
Derate above 25°C
PD
200
mW
1.6
mW/°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
FR-4 Board(2), TA = 25°C
Derate above 25°C
RθJA
600
°C/W
PD
300
mW
2.4
mW/°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
RθJA
TJ , Tstg
400
–55 to +150
°C/W
°C
DEVICE MARKING
LBAW56DW1T1G = A1
ELECTRICAL CHARACTERISTICS (T A = 25 °C unless otherwise noted) (EACH DIODE)
Characteristic
Symbol
Min
OFF CHARACTERISTICS
Reverse Breakdown Voltage
(I (BR) = 100 µAdc)
Reverse Voltage Leakage Current
(V R = 25 Vdc, T J = 150 °C)
(V R = 70 Vdc)
(V R = 70 Vdc, T J = 150 °C)
Diode Capacitance
(V R = 0, f = 1.0 MHz)
Forward Voltage
(I F = 1.0 mAdc)
(I F = 10 mAdc)
(I F = 50 mAdc)
(I F = 150 mAdc)
Reverse Recovery Time
(I F = I R = 10 mAdc, I R(REC) = 1.0 mAdc) (Figure 1) R L = 100Ω
1. FR-5 = 1.0 x 0.75 x 0.062 in.
V (BR)
70
IR
–
–
–
CD
–
VF
–
–
–
–
t rr
–
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
Max
–
30
2.5
50
3
715
855
1000
1250
6.0
Unit
Vdc
µAdc
pF
mVdc
ns
Rev.A 1/3