LBAT60BT1 Datasheet, PDF (1/4 Pages) Leshan Radio Company – Silicon Schottky Diode

Silicon Schottky Diode
● High current rectifier Schottky diode with
very low VF drop (typ. 0.24 V at IF = 10mA)
●For power supply applications
●For clamping and protection in
low voltage applications
● For detection and step-up-conversion
LBAT60BT1
SOD323
Maximum Ratings at TA = 25°C, unless otherwise specified
Parameter
Symbol
Value
Unit
Diode reverse voltage
VR
10
V
Forward current
IF
3
A
Surge forward current, (t <10ms) IFSM
5
Total power dissipation
TS < 28°C
PTOT
1350
mW
Junction temperature
Storage temperature
Tj
150
°C
Tstg
-55–150
Driver Marking
LBAT60BT1=5
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter
Values
Symbol
Unit
min.
typ.
max.
DC Characteristics
Reverse current
IR
µA
VR = 5 V
–
5
15
VR = 8 V
–
10
25
VR = 5 V, TA = 80 °C
–
100
800
VR = 8 V, TA = 80 °C
–
410
1500
Forward voltage
VF
V
IF = 10 mA
0.2
0.24
0.3
IF = 100 mA
0.26
0.32
0.38
IF = 500 mA
0.32
0.4
0.5
IF = 1000 mA
0.36
0.48
0.6
AC Characteristics
Diode capacitance
CT
12
25
30
Pf
VR = 5 V, f = 1 MHz
LBAT60BT1–1/4