LBAT54XV2T1G Datasheet, PDF (1/3 Pages) Leshan Radio Company – Schottky Barrier Diodes Extremely Fast Switching Speed

LESHAN RADIO COMPANY, LTD.
Schottky Barrier Diodes
These Schottky barrier diodes are designed for high speed switching
applications, circuit protection, and voltage clamping. Extremely low forward volt-
age reduces conduction loss. Miniature surface mount package is excellent for
hand held and portable applications where space is limited.
• Extremely Fast Switching Speed
• Low Forward Voltage — 0.35 Volts (Typ) @ I F = 10 mAdc
• Device Marking: JV
We declare that the material of product
compliance with RoHS requirements.
ORDERING INFORMATION
LBAT54XV2T1G
1
2
SOD-523
Device
Marking
LBAT54XV2T1G JV
LBAT54XV2T3G ^JV
Shipping
3000/Tape & Reel
10000/Tape & Reel
MAXIMUM RATINGS (TJ =125°C unless otherwise noted )
Rating
Reverse Voltage
Symbol
VR
Value
30
Unit
V
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR-5 Board,*
TA = 25°C
Derate above 25°C
Thermal Resistance Junction to Ambient
Junction Temperature
Storage Temperature
Symbol
PD
RθJA
T_J
T_stg
Max
200
1.57
635
125
-40 to +125
Unit
mW
mW/°C
°C/W
°C
°C
* FR-4 Minimum Pad
ELECTRICAL CHARACTERISTICS (T _A = 25°C unless otherwise noted) (EACH DIODE)
Characteristic
Reverse Breakdown Voltage (I R = 10 µA)
Total Capacitance (V R = 1.0 V, f = 1.0 MHz)
Reverse Leakage (V R = 25 V)
Forward Voltage (I F = 0.1 mAdc)
Forward Voltage (I F = 1.0 mAdc)
Forward Voltage (I F = 10 mAdc)
Forward Voltage (I F = 30 mAdc)
Forward Voltage (I F = 100 mAdc)
Reverse Recovery Time
(I F = I R = 10 mAdc, I R(REC) = 1.0 mAdc, Figure 1)
Forward Current (DC)
Repetitive Peak Forward Current
Non–Repetitive Peak Forward Current (t < 1.0 s)
Symbol
V(BR)R
CT
IR
VF
VF
VF
VF
VF
trr
IF
IFRM
IFSM
Min
Typ
30
—
—
—
—
0.5
—
0.22
—
0.29
—
0.35
—
0.41
—
0.52
—
—
—
—
—
—
—
—
1
CATHODE
Max
—
10
2.0
0.24
0.32
0.40
0.5
1.0
5.0
200
300
600
Unit
Volts
pF
µAdc
Vdc
Vdc
Vdc
Vdc
Vdc
ns
mAdc
mAdc
mAdc
2
ANODE
Rev.A 1/3