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LBAT54HT1G_15 Datasheet, PDF (1/3 Pages) Leshan Radio Company – Schottky Barrier Diodes
LESHAN RADIO COMPANY, LTD.
Schottky Barrier Diodes
These Schottky barrier diodes are designed for high speed switching
applications, circuit protection, and voltage clamping. Extremely low forward volt-
age reduces conduction loss. Miniature surface mount package is excellent for
hand held and portable applications where space is limited.
• Extremely Fast Switching Speed
• Low Forward Voltage — 0.35 Volts (Typ) @ I F = 10 mAdc
• Device Marking: JV
We declare that the material of product
compliance with RoHS requirements.
S- Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements;
AEC-Q101 Qualified and PPAP Capable.
ORDERING INFORMATION
Device
LBAT54HT13 G
LBAT54HT33 G
Marking
JV
JV
Shipping
3000/Tape & Reel
10000/Tape & Reel
LBAT54HT1G
S- LBAT54HT1G
1
2
SOD-323
1
CATHODE
2
ANODE
MAXIMUM RATINGS (TJ =125°C unless otherwise noted )
Rating
Symbol
Value
Unit
Reverse Voltage
VR
30
V
Total Device Dissipation FR-5 Board,*
TA = 25°C
Derate above 25°C
Thermal Resistance Junction to Ambient
Junction Temperature
Storage Temperature Range
PD
RθJA
TJ
T stg
200
1.57
635
125Max
–55 to +150
* FR-4 Minimum Pad
ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Reverse Breakdown Voltage (I R = 10 µA)
V(BR)R
30
Total Capacitance (V R = 1.0 V, f = 1.0 MHz)
CT
—
Reverse Leakage (V R = 25 V)
IR
—
Forward Voltage (I F = 0.1 mAdc)
VF
—
Forward Voltage (I F = 30 mAdc)
VF
—
Forward Voltage (I F = 100 mAdc)
VF
—
Reverse Recovery Time
(I F = I R = 10 mAdc, I R(REC) = 1.0 mAdc, Figure 1)
trr
—
Forward Voltage (I F = 1.0 mAdc)
VF
—
Forward Voltage (I F = 10 mAdc)
VF
—
Forward Current (DC)
IF
—
Repetitive Peak Forward Current
IFRM
—
Non–Repetitive Peak Forward Current (t < 1.0 s)
IFSM
—
mW
mW/°C
°C/W
°C
°C
Typ
—
—
0.5
0.22
0.41
0.52
—
0.29
0.35
—
—
—
Max
Unit
—
Volts
10
pF
2.0
µAdc
0.24
Vdc
0.5
Vdc
1
Vdc
5.0
ns
0.32
Vdc
0.40
Vdc
200
mAdc
300
mAdc
600
mAdc
Rev.C 1/3
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