LBAT54CWT1G_15 Datasheet, PDF (1/3 Pages) Leshan Radio Company – Schottky barrier diodes

LESHAN RADIO COMPANY, LTD.
Dual Series Schottky
Barrier Diodes
LBAT54CWT1G
S-LBAT54CWT1G
These Schottky barrier diodes are designed for high speed switch-
ing applications, circuit protection, and voltage clamping. Extremely
low forward voltage reduces conduction loss. Miniature surface mount
package is excellent for hand held and portable applications where
space is limited.
• Extremely Fast Switching Speed
• Low Forward Voltage — 0.35 Volts (Typ) @ I F = 10 mAdc
We declare that the material of product
compliance with RoHS requirements.
ORDERING INFORMATION
Device
LBAT54CWT1G
S-LBAT54CWT1G
LBAT54CWT3G
S-LBAT54CWT3G
Marking
5C
5C
Shipping
3000/Tape & Reel
10000/Tape & Reel
DEVICE MARKING
LBAT54CWT1G=5C
MAXIMUM RATINGS (T J = 125°C unless otherwise noted)
Rating
Reverse Voltage
Forward Power Dissipation
@ T A = 25°C
Derate above 25°C
Forward Current(DC)
Junction Temperature
Storage Temperature Range
Symbol
V_R
P_F
I_F
TJ
T stg
Value
30
Unit
Volts
225
1.8
200Max
125Max
–55 to +150
mW
mW/°C
mA
°C
°C
ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted)
Characteristic
Reverse Breakdown Voltage (I _R = 10 µA)
Total Capacitance (V R = 1.0 V, f = 1.0 MHz)
Reverse Leakage (V R = 25 V)
Forward Voltage (I _F = 0.1 mAdc)
Forward Voltage (I F = 30 mAdc)
Forward Voltage (I F = 100 mAdc)
Reverse Recovery Time
(I _F = I _R = 10 mAdc, I _R(REC) = 1.0 mAdc, Figure 1)
Forward Voltage (I F = 1.0 mAdc)
Forward Voltage (I _F = 10 mAdc)
Forward Current (DC)
Repetitive Peak Forward Current
Non–Repetitive Peak Forward Current (t < 1.0 s)
Symbol
V_(BR)R
CT
IR
V_F
VF
VF
trr
VF
V_F
I_F
IFRM
I_FSM
Min
Typ
30
—
—
—
—
0.5
—
0.22
—
0.41
—
0.52
—
—
—
0.29
—
0.35
—
—
—
—
—
—
3
1
2
SOT-323(SC-70)
ANODE
1
ANODE
2
3
CATHODE
Max
Unit
—
Volts
10
pF
2.0
µAdc
0.24
Vdc
0.5
Vdc
1
Vdc
5.0
ns
0.32
Vdc
0.40
Vdc
200
mAdc
300
mAdc
600
mAdc
Rev.B 1/3