LBAS316T1G_15 Datasheet, PDF (1/4 Pages) Leshan Radio Company – High-speed diode

LESHAN RADIO COMPANY, LTD.
High-speed diode
DESCRIPTION
The LBAS316T1 is a high-speed switching diode fabricated in
planar technology, and encapsulated in the SOD323(SC76) SMD
plastic package.
FEATURES
· Ultra small plastic SMD package
· High switching speed: max. 4 ns
· Continuous reverse voltage: max. 75 V
· Repetitive peak reverse voltage: max. 100 V
· Repetitive peak forward current: max. 500 mA.
· We declare that the material of product compliance with RoHS requirements.
· S- Prefix for Automotive and Other Applications Requiring Unique Site and
Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
APPLICATIONS
· High-speed switching in e.g. surface mounted circuits.
LBAS316T1G
S-LBAS316T1G
1
2
SOD– 323
1
CATHODE
2
ANODE
ORDERING INFORMATION
Device
Marking
Shipping
LBAS316T1G
Z9
S-LBAS316T1G
LBAS316T3G
Z9
S-LBAS316T3G
3000 Tape & Reel
10000 Tape & Reel
ELECTRICAL CHARACTERISTICS T j =25°C unless otherwise specified.
SYMBOL PARAMETER
CONDITIONS
VF
forward voltage
IR
reverse current
Cd
diode capacitance
t rr reverse recovery time
V fr forward recovery voltage
see Fig.2 I F = 1 mA
I F = 10 mA
I F =50 mA
I F = 150 mA
see Fig.4 V R = 25 V
V R =75 V
V R = 25 V; T j = 150 °C
V R = 75 V; T j = 150 °C;
f = 1 MHz; V R = 0; see Fig.5
when switched from I _F =10mA to I _R = 10mA;
R L = 100 Ω; measured at I R = 1 mA; see Fig.6
when switched from IF = 10 mA; tr = 20 ns; see Fig.7
MAX.
715
855
1
1.25
30
1
30
50
2
4
UNIT
mV
mV
V
V
nA
µA
µA
µA
pF
ns
1.75
V
Rev.O 1/4