LBAS20HT1G_15 Datasheet, PDF (1/3 Pages) Leshan Radio Company – High Voltage Switching Diode

LESHAN RADIO COMPANY, LTD.
High Voltage
Switching Diode
LBAS20HT1G
S-LBAS20HT1G
z We declare that the material of product compliance with
1
RoHS requirements.
z S- Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC-Q101
Qualified and PPAP Capable.
ORDERING INFORMATION
Device
Marking
LBAS20HT1G
JR
S-LBAS20HT1G
LBAS20HT3G
JR
S-LBAS20HT3G
MAXIMUM RATINGS
Rating
Continuous Reverse Voltage
Peak Forward Current
Peak Forward Surge Current
Shipping
3000/Tape&Reel
10000/Tape&Reel
Symbol
VR
IF
IFM(surge)
Value
200
200
625
1
CATHODE
Unit
Vdc
mAdc
mAdc
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR–5 Board,*
TA = 25°C
Derate above 25°C
Thermal Resistance Junction to Ambient
Junction and Storage
Temperature Range
Symbol
PD
RθJA
TJ, Tstg
Max
200
1.57
635
–55 to+150
Unit
mW
mW/°C
°C/W
°C
*FR–5 Minimum Pad
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
OFF CHARACTERISTICS
Reverse Voltage Leakage Current
(VR = 200 Vdc)
(VR = 200 Vdc, TJ = 150°C)
Reverse Breakdown Voltage
(IBR = 100 µAdc)
Forward Voltage
(IF = 100 mAdc)
(IF = 200 mAdc)
Diode Capacitance
(VR = 0, f = 1.0 MHz)
Reverse Recovery Time
(IF = IR = 30 mAdc, RL = 100 Ω)
IR
V(BR)
VF
CD
trr
–
–
200
–
–
–
–
Max
1.0
100
–
1000
1250
5.0
50
2
SOD– 323
2
ANODE
Unit
µAdc
Vdc
mV
pF
ns
Rev.O 1/3