|
LBAS16TT1G_15 Datasheet, PDF (1/4 Pages) Leshan Radio Company – Silicon Switching Diode | |||
|
LESHAN RADIO COMPANY, LTD.
Silicon Switching Diode
FEATURE
z We declare that the material of product
compliance with RoHS requirements.
z S- Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC-Q101 Qualified
and PPAP Capable.
LBAS16TT1G
S-LBAS16TT1G
MAXIMUM RATINGS (TA = 25oC)
Rating
Continuous Reverse Voltage
Recurrent Peak Forward Current
Peak Forward Surge Current
Pulse Width = 10 µs
Total Power Dissipation, One Diode Loaded
TA = 25°C
Derate above 25°C
Mounted on a Ceramic Substrate
(10 x 8 x 0.6 mm)
Operating and Storage Junction
Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Ambient
One Diode Loaded
Mounted on a Ceramic Substrate
(10 x 8 x 0.6 mm)
Symbol
VR
IR
IFM(surge)
PD
TJ, Tstg
Symbol
RθJA
Max
75
200
500
150
1.6
â55 to +150
Max
0.625
DEVICE MARKING
LBAS16TT1G= A6
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Forward Voltage
(IF = 1.0 mA)
(IF = 10 mA)
(IF = 50 mA)
(IF = 150 mA)
Reverse Current
(VR = 75 V)
(VR = 75 V, TJ = 150°C)
(VR = 25 V, TJ = 150°C)
Capacitance
(VR = 0, f = 1.0 MHz)
Reverse Recovery Time
(IF = IR = 10 mA, RL = 50 â¦) (Figure 1)
Stored Charge
(IF = 10 mA to VR = 6.0 V, RL = 500 â¦) (Figure 2)
Forward Recovery Voltage
(IF = 10 mA, tr = 20 ns) (Figure 3)
ORDERING INFORMATION
Device
LBAS16TT1G
S-LBAS16TT1G
LBAS16TT3G
S-LBAS16TT3G
Marking
A6
A6
Shipping
3000/Tape&Reel
10000/Tape&Reel
Unit
V
mA
mA
mW
mW/°C
°C
Unit
°C/mW
Symbol
VF
IR
CD
trr
QS
VFR
SC-89
3
CATHODE
1
ANODE
Min
Max
Unit
mV
â
715
â
866
â
1000
â
1250
µA
â
1.0
â
50
â
30
â
2.0
pF
â
6.0
ns
â
45
PC
â
1.75
V
Rev.O 1/4
|
▷ |