LBAS16BST5G_15 Datasheet, PDF (1/3 Pages) Leshan Radio Company – Switching Diode

LESHAN RADIO COMPANY, LTD.
Switching Diode
FEATURE
ƽ^{Small plastic SMD package.}
ƽ^{Continuous reverse voltage: max. 75 V.}
ƽHigh-speed switching in hybrid thick and thin-film circuits.
ƽ_{We declare that the material of product compliance with RoHS requirements.}
ƽS- Prefix for Automotive and Other Applications Requiring Unique Site and
Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
LBAS16BST5G
S-LBAS16BST5G
1
DEVICE MARKING AND ORDERING INFORMATION
2
Device
Marking
Shipping
LBAS16BST1G
3*
5000/Tape&Reel
LBAS16BST3G
3*
8000/Tape&Reel
LBAS16BST5G
3*
*Rotated 90°
MAXIMUM RATINGS
10000/Tape&Reel
Rating
Continuous Reverse Voltage
Peak Forward Current
Peak Forward Surge Current
Symbol
VR
IF
I FM(surge)
Value
75
200
500
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR-5 Board,*
TA = 25°C
Derate above 25°C
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
**FR-4 Minimum Pad
Symbol
PD
R θJA
T J , T stg
Max
200
1.57
635
-55to+150
ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Reverse Voltage Leakage Current
(V R = 75 Vdc)
(V R = 75 Vdc, T J = 150°C)
(V R = 25 Vdc, T J = 150°C)
Reverse Breakdown Voltage
(I BR = 100 µAdc)
IR
V (BR)
Forward Voltage
(I F = 1.0 mAdc)
(I F = 10 mAdc)
(I F = 50 mAdc)
(I F = 150 mAdc)
Diode Capacitance
(V R = 0, f = 1.0 MHz)
Forward Recovery Voltage
(I F = 10 mAdc, t r = 20 ns)
Reverse Recovery Time
(I F = I R = 10 mAdc, R L = 50 Ω)
Stored Charge
(I F = 10 mAdc to V R = 5.0 Vdc, R L = 500 Ω)
VF
CD
V FR
t rr
QS
SOD882
1
Cathode
Unit
Vdc
mAdc
mAdc
Unit
mW
mW/°C
°C/W
°C
Min
—
—
—
75
—
—
—
—
—
—
—
—
Max
Unit
µAdc
1.0
50
30
—
Vdc
mV
715
855
1000
1250
2.0
pF
1.75
Vdc
4.0
ns
45
pC
2
Anode
Rev.A 1/3