L9015QLT1G Datasheet, PDF (1/4 Pages) Leshan Radio Company – General Purpose Transistors PNP Silicon

LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
PNP Silicon
FEATURE
ƽComplementary to L9014.
ƽ _{We declare that the material of product compliance with RoHS requirements.}
DEVICE MARKING AND ORDERING INFORMATION
Device
Marking
Shipping
L9015QLT1G
15Q
3000/Tape&Reel
L9015QLT3G
15Q
10000/Tape&Reel
L9015RLT1G
15R
3000/Tape&Reel
L9015RLT3G
15R
10000/Tape&Reel
L9015SLT1G
15S
3000/Tape&Reel
L9015SLT3G
15S
10000/Tape&Reel
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector current-continuoun
Symbol
V_CEO
V_CBO
V_EBO
I_C
Value
-45
-50
-5
-100
Unit
V
V
V
mA
THERMAL CHARATEERISTICS
Characteristic
Total Device Dissipation FR-5 Board.(1)
T_A=25^oC
Derate above 25^oC
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) TA=25 ^oC
Derate above 25^oC
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
Symbol
P_D
R_JA
P_D
R_JA
T_J ,T_stg
Max
225
1.8
556
300
2.4
417
-55 to +150
Unit
mW
mW/^oC
o_C/W
mW
mW/^oC
o_C/W
o_C
L9015QLT1G
Series
3
1
2
SOT– 23
COLLECTOR
3
1
BASE
2
EMITTER
Rev.O 1/4