L9014QLT1G Datasheet, PDF (1/4 Pages) Leshan Radio Company – General Purpose Transistors NPN Silicon

LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
NPN Silicon
FEATURE
ƽComplementary to L9014.
ƽWe declare that the material of product compliance with RoHS requirements.
DEVICE MARKING AND ORDERING INFORMATION
Device
L9014QLT1G
Marking
14Q
Shipping
3000/Tape&Reel
L9014QLT3G
14Q
10000/Tape&Reel
L9014RLT1G
14R
3000/Tape&Reel
L9014RLT3G
14R
10000/Tape&Reel
L9014SLT1G
14S
3000/Tape&Reel
L9014SLT3G
14S
10000/Tape&Reel
L9014TLT1G
14T
3000/Tape&Reel
L9014TLT3G
14T
10000/Tape&Reel
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector-Emitter Voltage
V_CEO
45
V
Collector-Base Voltage
V_CBO
50
V
Emitter-Base Voltage
V_EBO
5
V
Collector current-continuoun
I_C
100
mA
THERMAL CHARATEERISTICS
Characteristic
Symbol Max
Unit
Total Device Dissipation FR-5 Board, (1)
P_D
T_A=25^oC
Derate above 25^oC
225
mW
1.8
mW/ ^oC
Thermal Resistance, Junction to Ambient R_©JA
556
o _C/W
Total Device Dissipation
P_D
Alumina Substrate, (2) TA=25 ^oC
300
mW
Derate above 25^oC
2.4
mW/ ^oC
Thermal Resistance, Junction to Ambient R_©JA
417
o_{C /W}
Junction and Storage Temperature
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
T_J ,T_stg
-55 to +150 ^o C
L9014QLT1G
Series
3
1
2
SOT– 23
COLLECTOR
3
1
BASE
2
EMITTER
Rev.O 1/4