L9013PLT1G Datasheet, PDF (1/2 Pages) Leshan Radio Company – General Purpose Transistors NPN Silicon

LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
NPN Silicon
FEATURE
We declare that the material of product compliance with RoHS requirements.
DEVICE MARKING AND ORDERING INFORMATION
Device
Marking
Shipping
L9013PLT1G
13P
3000/Tape&Reel
L9013PLT3G
13P
10000/Tape&Reel
L9013PLT1G
Series
3
1
2
SOT-23 (TO-236AB)
L9013QLT1G
13Q
3000/Tape&Reel
L9013QLT3G
L9013RLT1G
13Q
10000/Tape&Reel
13R
3000/Tape&Reel
3
COLLECTOR
L9013RLT3G
L9013SLT1G
13R
10000/Tape&Reel
13S
3000/Tape&Reel
1
BASE
L9013SLT3G
13S
10000/Tape&Reel
MAXIMUM RATINGS
Rating
Symbol
Collector-Emitter Voltage
V_CEO
Collector-Base Voltage
Emitter-Base Voltage
V_CBO
V_EBO
Collector current-continuoun
IC
THERMAL CHARATEERISTICS
Characteristic
Total Device Dissipation FR-5 Board, (1)
T_A=25^oC
Derate above 25^oC
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) TA=25 ^oC
Derate above 25^oC
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Value
20
40
5
500
Unit
V
V
V
mAdc
Symbol
P_D
R _{θ JA}
P_D
R _θJA
Tj ,Tstg
Max
225
1.8
556
300
2.4
417
-55 to +150
Unit
mW
mW/^oC
o_C/W
mW
mW/^oC
o_C/W
o_C
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
ELECTRICAL CHARACTERISTICS (TA=25^oC unless otherwise noted)
Characteristic
Symbol
Min
Typ
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(IC=1.0mA)
Emitter-Base Breakdown Voltage
(IE=100µA)
Collector-Base Breakdown Voltage
(IC=100µA)
Collector Cutoff Current (VCB=35V)
V(BR)CEO
20
-
V(BR)EBO
5
-
V(BR)CBO
40
-
ICBO
-
-
Emitter Cutoff Current (VEB=4V)
IEBO
2
EMITTER
Max
-
-
-
150
150
Unit
V
V
V
nA
nA
Rev.O 1/2