L9013LT1 Datasheet, PDF (1/2 Pages) Leshan Radio Company – General Purpose Transistors NPN Silicon

LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
NPN Silicon
1
BASE
3
COLLECTOR
2
EMITTER
L9013*LT1
3
1
2
SOT-23 (TO-236AB)
MAXIMUM RATINGS
Rating
Symbol
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
V_CEO
V_CBO
V_EBO
Collector current-continuoun
IC
THERMAL CHARATEERISTICS
Characteristic
Total Device Dissipation FR-5 Board, (1)
T_A=25^oC
Derate above 25^oC
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) TA=25 ^oC
Derate above 25^oC
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
DEVICE MARKING
L9013QLT1=13Q
Value
20
40
5
500
Unit
V
V
V
mAdc
Symbol
P_D
R _{θ JA}
P_D
R _θJA
Tj ,Tstg
Max
225
1.8
556
300
2.4
417
-55 to +150
Unit
mW
mW/^oC
o_C/W
mW
mW/^oC
o_C/W
o_C
ELECTRICAL CHARACTERISTICS (TA=25^oC unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(IC=1.0mA)
Emitter-Base Breakdown Voltage
(IE=100µA)
Collector-Base Breakdown Voltage
(IC=100µA)
Collector Cutoff Current (VCB=35V)
V(BR)CEO
V(BR)EBO
V(BR)CBO
ICBO
20
5
40
-
-
-
V
-
-
V
-
-
V
-
150
nA
Emitter Cutoff Current (VEB=4V)
IEBO
150
nA
L9013*LT1–1/2