L9012PLT1G_15 Datasheet, PDF (1/2 Pages) LANSDALE Semiconductor Inc. – General Purpose Transistors

General Purpose Transistors
LESHAN RADIO COMPANY, LTD.
PNP Silicon
FEATURE
We declare that the material of product compliance with RoHS requirements.
S- Prefix for Automotive and Other Applications Requiring Unique Site
and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
DEVICE MARKING AND ORDERING INFORMATION
L9012PLT1G
Series
S-L9012PLT1G
Series
Device
L9012PLT1G
S-L9012PLT1G
L9012PLT3G
S-L9012PLT3G
L9012QLT1G
S-L9012QLT1G
L9012QLT3G
S-L9012QLT3G
L9012RLT1G
S-L9012RLT1G
L9012RLT3G
S-L9012RLT3G
L9012SLT1G
S-L9012SLT1G
L9012SLT3G
S- L9012SLT3G
Marking
12P
12P
12Q
12Q
12R
12R
12S
12S
Shipping
3000/Tape&Reel
10000/Tape&Reel
3000/Tape&Reel
10000/Tape&Reel
3000/Tape&Reel
10000/Tape&Reel
3000/Tape&Reel
10000/Tape&Reel
3
1
2
SOT-23 (TO-236AB)
1
BASE
3
COLLECTOR
MAXIMUM RATINGS
Rating
Symbol
Collector-Emitter Voltage
V_CEO
Collector-Base Voltage
V_CBO
Emitter-Base Voltage
V_EBO
Collector current-continuoun
IC
THERMAL CHARATEERISTICS
Value
-20
-40
-5
-500
Unit
V
V
V
mAdc
2
EMITTER
Characteristic
Total Device Dissipation FR-5 Board, (1)
T_A=25^oC
Derate above 25^oC
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) TA=25 ^oC
Derate above 25^oC
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
P_D
R _{θ JA}
P_D
R _θJA
Tj ,Tstg
Max
225
1.8
556
300
2.4
417
-55 to +150
Unit
mW
mW/^oC
o_C/W
mW
mW/^oC
o_C/W
o_C
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
ELECTRICAL CHARACTERISTICS (T_A=25^oC unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(IC=-1.0mA)
Emitter-Base Breakdown Voltage
(IE=-100µ A)
Collector-Base Breakdown Voltage
(IC=-100µ A)
Collector Cutoff Current (VCB=-35V)
V(BR)CEO
-20
-
-
V
V(BR)EBO
-5
-
-
V
V(BR)CBO
-40
-
-
V
I CBO
-
-
-150
nA
Emitter Cutoff Current (VBE=-4V)
IEBO
-150
nA
Rev.O 1/2