L9012PLT1G Datasheet, PDF (1/2 Pages) Leshan Radio Company – General Purpose Transistors PNP Silicon

LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
PNP Silicon
FEATURE
We declare that the material of product compliance with RoHS requirements.
DEVICE MARKING AND ORDERING INFORMATION
Device
Marking
Shipping
L9012PLT1G
12P
3000/Tape&Reel
L9012PLT3G
12P
10000/Tape&Reel
L9012PLT1G
Series
3
1
2
SOT-23 (TO-236AB)
L9012QLT1G
L9012QLT3G
L9012RLT1G
L9012RLT3G
L9012SLT1G
L9012SLT3G
12Q
12Q
12R
12R
12S
12S
3000/Tape&Reel
10000/Tape&Reel
3000/Tape&Reel
10000/Tape&Reel
3000/Tape&Reel
10000/Tape&Reel
1
BASE
3
COLLECTOR
2
EMITTER
MAXIMUM RATINGS
Rating
Symbol
Collector-Emitter Voltage
V_CEO
Collector-Base Voltage
V_CBO
Emitter-Base Voltage
V_EBO
Collector current-continuoun
IC
THERMAL CHARATEERISTICS
Characteristic
Total Device Dissipation FR-5 Board, (1)
T_A=25^oC
Derate above 25^oC
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) TA=25 ^oC
Derate above 25^oC
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Value
-20
-40
-5
-500
Unit
V
V
V
mAdc
Symbol
P_D
R _{θ JA}
P_D
R _θJA
Tj ,Tstg
Max
225
1.8
556
300
2.4
417
-55 to +150
Unit
mW
mW/^oC
o_C/W
mW
mW/^oC
o_C/W
o_C
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
ELECTRICAL CHARACTERISTICS (T_A=25^oC unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(IC=-1.0mA)
Emitter-Base Breakdown Voltage
(IE=-100µ A)
Collector-Base Breakdown Voltage
(IC=-100µ A)
Collector Cutoff Current (VCB=-35V)
V(BR)CEO
-20
-
-
V
V(BR)EBO
-5
-
-
V
V(BR)CBO
-40
-
-
V
I CBO
-
-
-150
nA
Emitter Cutoff Current (VBE=-4V)
IEBO
-150
nA
Rev.O 1/2