L8550PLT1G Datasheet, PDF (1/4 Pages) Leshan Radio Company – General Purpose Transistors PNP Silicon

LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
PNP Silicon
FEATURE
We declare that the material of product compliance with RoHS requirements.
DEVICE MARKING AND ORDERING INFORMATION
Device
Marking
Shipping
L8550PLT1G
85P
3000/Tape&Reel
L8550PLT3G
85P
10000/Tape&Reel
L8550QLT1G
1YD
3000/Tape&Reel
L8550QLT3G
1YD
L8550RLT1G
1YF
10000/Tape&Reel
3000/Tape&Reel
L8550RLT3G
1YF
10000/Tape&Reel
L8550SLT1G
1YH
3000/Tape&Reel
L8550SLT3G
1YH
10000/Tape&Reel
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base voltage
Emitter-base Voltage
Collector current-continuoun
Symbol
V CEO
V _CBO
V EBO
IC
Value
-25
-40
-5
-800
Unit
V
V
V
mAdc
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR- 5 Board (1)
T A = 25 °C
Derate above 25 °C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) T A = 25 °C
Derate above 25 °C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol Max
Unit
PD
225
mW
1.8
mW /°C
R θJA
556
°C/W
PD
300
mW
2.4
mW /°C
R θJA
417
°C/W
T J , T stg -55 to +150 °C
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
L8550PLT1G
Series
3
1
2
SOT– 23
COLLECTOR
3
1
BASE
2
EMITTER
Rev.O 1/4