L8550LT1 Datasheet, PDF (1/3 Pages) Leshan Radio Company – General Purpose Transistors PNP Silicon

LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
PNP Silicon
FEATURE
Pb-Free Package is available.
ORDERING INFORMATION
Device
Package
L8550*LT1
SOT-23
L8550*LT1G
(Pb-Free)
SOT-23
Shipping
3000/Tape&Reel
3000/Tape&Reel
MAXIMUM RATINGS
Rating
Symbol Value
Unit
Collector-Emitter Voltage
Collector-Base voltage
Emitter-base Voltage
Collector current-continuoun
THERMAL CHARACTERISTICS
V CEO
V CBO
V EBO
IC
25
V
40
V
5
V
800
mAdc
Characteristic
Symbol Max
Unit
Total Device Dissipation FR- 5 Board (1)
T A = 25 °C
Derate above 25 °C
PD
225
mW
1.8
mW /°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) T A = 25 °C
Derate above 25 °C
R θJA
556
°C/W
PD
300
mW
2.4
mW /°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
DEVICE MARKING
R θJA
417
°C/W
T J , T stg -55 to +150 °C
L8550QLT1 = 1YD L8550PLT1=85P
ELECTRICAL CHARACTERISTICS (T A = 25 °C unless otherwise noted)
Characteristic
Symbol
Min
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(I C = 1.0mA)
Emitter-Base Breakdown Voltage
(I E = 100µA)
Collector-Base Breakdown voltage
(I C= 100µA)
Collector Cutoff Current
(VCB = 35 V)
Emitter Cutoff Current
(VEB =4V)
1. FR-5 = 1.0 x 0.75 x 0.062 in.
V (BR)CEO
25
V (BR)EBO
5
V (BR)CBO
40
I CBO
–
I EBO
–
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
L8550*LT1
3
1
2
SOT– 23
COLLECTOR
3
1
BASE
2
EMITTER
Typ
Max
Unit
–
–
V
–
–
V
–
–
V
–
150
nA
–
150
nA
L8550*LT1–1/3