L8550HPLT1G_11 Datasheet, PDF (1/3 Pages) Leshan Radio Company – General Purpose Transistors PNP Silicon Epitaxial planar type.

LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
PNP Silicon
L8550HPLT1G
Series
FEATURE
ƽHigh current capacity in compact package.
ƽEpitaxial planar type.
ƽPNP complement: L8550H
ƽWe declare that the material of product compliance with RoHS requirements.
DEVICE MARKING AND ORDERING INFORMATION
Device
Marking
Shipping
L8550HPLT1G
1HB
3000/Tape&Reel
L8550HPLT3G
L8550HQLT1G
1HB
1HD
10000/Tape&Reel
3000/Tape&Reel
L8550HQLT3G
L8550HRLT1G
1HD
1HF
10000/Tape&Reel
3000/Tape&Reel
L8550HRLT3G
L8550HSLT1G
1HF
1HH
10000/Tape&Reel
3000/Tape&Reel
L8550HSLT3G
1HH
10000/Tape&Reel
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Symbol
VCEO
VCBO
VEBO
IC
Max
-25
-40
-5
-1500
Unit
V
V
V
mAdc
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR-5 Board,(1)
TA=25°C
Derate above 25°C
Thermal Resistance,Junction to Ambient
Total Device Dissipation
Alumina Substrate,(2) TA=25°C
Derate above 25°C
Symbol
PD
R θJ A
P_D
Max
Unit
225
mW
1.8
mW/°C
556
°C/W
300
mW
2.4
mW/°C
Thermal Resistance,Junction to Ambient
Junction and Storage Temperature
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
R θJ A
T j,T St g
417
-55 to +150
°C/W
°C
3
1
2
SOT–23
COLLECTOR
3
1
BASE
2
EMITTER
Rev.A 1/3