L8050QLT1G_15 Datasheet, PDF (1/4 Pages) LANSDALE Semiconductor Inc. – General Purpose Transistors NPN Silicon

LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
NPN Silicon
FEATURE
ƽHigh current capacity in compact package.
I_C = 0.8A.
ƽEpitaxial planar type.
ƽNPN complement: L8050
ƽPb-Free Package is available.
ƽS- Prefix for Automotive and Other Applications Requiring Unique Site
and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
DEVICE MARKING AND ORDERING INFORMATION
Device
Marking
Shipping
L8050PLT1G
S-L8050PLT1G
80P
3000/Tape&Reel
L8050PLT3G
S-L8050PLT3G
80P 10000/Tape&Reel
L8050QLT1G
S-L8050QLT1G
1YC 3000/Tape&Reel
L8050QLT3G
S-L8050QLT3G
1YC 10000/Tape&Reel
L8050RLT1G
S-L8050RLT1G
1YE
3000/Tape&Reel
L8050RLT3G
S-L8050RLT3G
1YE 10000/Tape&Reel
L8050SLT1G
L8050SLT3G
S-L8050SLT1G
S-L8050SLT3G
80S 3000/Tape&Reel
80S 10000/Tape&Reel
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current-continuoun
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR-5 Board,(1)
TA=25°C
Derate above 25°C
Thermal Resistance,Junction to Ambient
Total Device Dissipation
Alumina Substrate,(2) TA=25°C
Derate above 25°C
Thermal Resistance,Junction to Ambient
Junction and Storage Temperature
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
Symbol
VCEO
VCBO
VEBO
IC
Max
25
40
5
800
Unit
V
V
V
mAdc
Symbol
PD
R θJ A
P_D
R θJ A
T j,T St g
Max
Unit
225
mW
1.8
mW/°C
556
°C/W
300
mW
2.4
mW/°C
417
-55 to +150
°C/W
°C
L8050PLT1G
Series
S-L8050PLT1G
Series
3
1
2
SOT–23
COLLECTOR
3
1
BASE
2
EMITTER
Rev.O 1/4