L8050HRLT1G_15 Datasheet, PDF (1/3 Pages) Leshan Radio Company – General Purpose Transistors

LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
NPN Silicon
L8050HQLTIG
Series
FEATURE
ƽHigh current capacity in compact package.
I_C =1.5 A.
ƽEpitaxial planar type.
ƽNPN complement: L8050H
ƽPb-Free Package is available.
ƽS- Prefix for Automotive and Other Applications Requiring Unique Site
and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
S-L8050HQLTIG
Series
3
1
2
DEVICE MARKING AND ORDERING INFORMATION
Device
Marking
Shipping
L8050HPLT1G
S-L8050HPLT1G 1HA
3000/Tape&Reel
L8050HPLT3G
S-L8050HPLT3G 1HA
10000/Tape&Reel
L8050HQLT1G
S-L8050HQLT1G 1HC
3000/Tape&Reel
L8050HQLT3G
S-L8050HQLT3G ^1HC
10000/Tape&Reel
SOT–23
COLLECTOR
3
1
BASE
2
EMITTER
L8050HRLT1G
L8050HRLT3G
L8050HSLT1G
S-L8050HRLT1G
S-L8050HRLT3G
S-L8050HSLT1G
1HE
1HE
1HG
3000/Tape&Reel
10000/Tape&Reel
3000/Tape&Reel
L8050HSLT3G
S-L8050HSLT3G 1HG
10000/Tape&Reel
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR-5 Board,(1)
TA=25°C
Derate above 25°C
Thermal Resistance,Junction to Ambient
Total Device Dissipation
Alumina Substrate,(2) TA=25°C
Derate above 25°C
Thermal Resistance,Junction to Ambient
Junction and Storage Temperature
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
Symbol
VCEO
VCBO
VEBO
IC
Max
25
40
5
1500
Unit
V
V
V
mAdc
Symbol
PD
R θJ A
P_D
R θJ A
T j,T St g
Max
Unit
225
mW
1.8
mW/°C
556
°C/W
300
mW
2.4
mW/°C
417
-55 to +150
°C/W
°C
Rev.A 1/3