L74VHC1G03 Datasheet, PDF (1/6 Pages) Leshan Radio Company – 2-Input NAND Gate with Open Drain Output

LESHAN RADIO COMPANY, LTD.
2–Input NAND Gate with
Open Drain Output
L74VHC1G03
The L74VHC1G03 is an advanced high speed CMOS 2–input NOR gate with an open drain output fabricated with silicon gate
CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power
dissipation.
The internal circuit is composed of three stages, including an open drain output which provides the capability to set output switching
level. This allows the L74VHC1G03 to be used to interface 5 V circuits to circuits of any voltage between V CC and 7 V using an external
resistor and power supply.
The L74VHC1G03 input structure provides protection when voltages up to 7 V are applied, regardless of the supply voltage.
• High Speed: t PD = 3.6 ns (Typ) at V CC = 5 V
• Low Internal Power Dissipation: I CC = 2 mA (Max) at T A = 25°C
• Power Down Protection Provided on Inputs
• Pin and Function Compatible with Other Standard Logic Families
• Chip Complexity: FETs = 62; Equivalent Gates = 16
5
4
MARKING DIAGRAMS
1
2
3
SC–88A / SOT–353/SC–70
DF SUFFIX
5
4
VP^d
Pin 1
d = Date Code
Figure 1. Pinout (Top View)
1
2
3
TSOP–5/SOT–23/SC–59
DT SUFFIX
VP^d
Pin 1
d = Date Code
Figure 2. Logic Symbol
PIN ASSIGNMENT
1
IN B
2
IN A
3
GND
4
OUT Y
5
V CC
FUNCTION TABLE
Inputs
A
B
L
L
L
H
H
L
H
H
Output
Y
Z
L
L
L
ORDERING INFORMATION
See detailed ordering and shipping information in the
package dimensions section on page 5 of this data sheet.
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