L4501DW1T1 Datasheet, PDF (1/3 Pages) Leshan Radio Company – Silicon NPN Epitaxial Planer Transistor

LESHAN RADIO COMPANY, LTD.
Silicon NPN Epitaxial Planer
Transistor
L4501DW1T1
Feature
Pb-Free Package is available.
65 ₄
1
2
3
SC-88/SOT-363
MAXIMUM RATINGS
Parameter
Symbol
Collector-Emitter Voltage
V_CEO
Collector-Base Voltage
Emitter-Base Voltage
V_CBO
V_EBO
Collector current-continuoun
IC
THERMAL CHARATEERISTICS
Characteristic
Total Device Dissipation FR-5 Board, (1)
T_A=25^oC
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
DEVICE MARKING
L4501DW1T1=5H
Ratings
50
60
7
150
Unit
V
V
V
mAdc
Symbol
P_D
R _JA
Tj ,Tstg
Max
380
328
-55 to +150
Unit
mW
o_C/W
o_C
ELECTRICAL CHARACTERISTICS (TA=25^oC unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(IC=1mA)
Emitter-Base Breakdown Voltage
(IE=50 A)
Collector-Base Breakdown Voltage
(IC=50 A)
Collector Cutoff Current
(VCB=60V)
V(BR)CEO
50
-
-
V
V(BR)EBO
7
-
-
V
V(BR)CBO
60
-
-
V
ICBO
-
-
0.1
A
L4501DW1T1-1/3