L4401DW1T1 Datasheet, PDF (1/2 Pages) Leshan Radio Company – Silicon PNP Epitaxial Planer Transistor

LESHAN RADIO COMPANY, LTD.
Silicon PNP Epitaxial Planer
Transistor
L4401DW1T1
MAXIMUM RATINGS
Parameter
Symbol
Collector-Emitter Voltage
Collector-Base Voltage
V_CEO
V_CBO
Emitter-Base Voltage
V_EBO
Collector current-continuoun
IC
THERMAL CHARATEERISTICS
Characteristic
Total Device Dissipation FR-5 Board, (1)
T_A=25^oC
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
DEVICE MARKING
L4401DW1T1=5K
Ratings
-50
-60
-6
-150
Unit
V
V
V
mAdc
Symbol
P_D
R _JA
Tj ,Tstg
Max
380
328
-55 to +150
Unit
mW
o_C/W
o_C
ELECTRICAL CHARACTERISTICS (TA=25^oC unless otherwise noted)
Characteristic
Symbol
Min
Typ
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(IC=-1mA)
Emitter-Base Breakdown Voltage
(IE=-50 A)
Collector-Base Breakdown Voltage
(IC=-50 A)
V(BR)CEO
-50
-
V(BR)EBO
-6
-
V(BR)CBO
-60
-
SC88
Max
Unit
-
V
-
V
-
V
L4401DW1T1-1/2