L2SK3541M3T5G_15 Datasheet, PDF (1/4 Pages) Leshan Radio Company – Silicon N-Channel MOSFET

LESHAN RADIO COMPANY, LTD.
Silicon N-Channel MOSFET
Applications
Interfacing,switching(30V,100mA)
Features
Low on-resistance
Fast switching speed
Low voltage drive(2.5V) makes this ideal for portable equipment
Drive circuits can be simple
Parallel use is easy
we declare that the material of product
compliance with RoHS requirements.
ORDERING INFORMATION
Device
Marking
Shipping
L2SK3541MT5G KN
8000/Tape & Reel
L2SK3541MT5G
3
2
1
SOT-723
Equivalent circuit
3 Drain
1 Gate
∗ Gate
Protection
Diode
2 Source
A por tection diode is included between the gate
and the source terminals to protect the diode
against static electricity when the product is in use.
Use a protection circuit when the fixed voltages
are exceeded.
Maximum Ratings and Thermal Characteristics (T_A = 25^oC unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain Current
I_D
Pulsed Drain Current ¹⁾
I_DM
Total Power Dissipation ²⁾
P_D
Operating Junction and Storage Temperature Range
1) Pw≤10µs, Duty cycle≤1%
2) With each pin mounted on the recommended lands.
T_J, T_stg
Limit
Unit
30
V
± 20
± 100
mA
± 400
150
mW
-55 to 150
o_C
Rev.O 1/4