L2SK3019LT1G Datasheet, PDF (1/4 Pages) Leshan Radio Company – Silicon N-Channel MOSFET Fast switching speed

LESHAN RADIO COMPANY, LTD.
Silicon N-Channel MOSFET
Applications
Interfacing,switching(30V,100mA)
Features
Low on-resistance
Fast switching speed
Low voltage drive(2.5V) makes this ideal for portable equipment
Drive circuits can be simple
Parallel use is easy
ESD>500V
we declare that the material of product
compliance with RoHS requirements.
ORDERING INFORMATION
Device
Marking
Shipping
L2SK3019LT1G KN
3000/Tape & Reel
L2SK3019LT3G KN
10,000/Tape & Reel
L2SK3019LT1G
3
1
2
SOT– 23
Equivalent circuit
Drain
Gate
∗ Gate
Protection
Diode
Source
A por tection diode is included between the gate
and the source terminals to protect the diode
against static electricity when the product is in use.
Use a protection circuit when the fixed voltages
are exceeded.
Maximum Ratings and Thermal Characteristics (T_A = 25^oC unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain Current
I_D
Pulsed Drain Current ¹⁾
I_DM
Total Power Dissipation ²⁾
P_D
Operating Junction and Storage Temperature Range
1) Pw≤10µs, Duty cycle≤1%
2) With each pin mounted on the recommended lands.
T_J, T_stg
Limit
Unit
30
V
± 20
± 100
mA
± 400
225
mW
-55 to 150
o_C
Rev .A 1/4