L2SK3018WT1G_15 Datasheet, PDF (1/5 Pages) Leshan Radio Company – Silicon N-channel MOSFET

LESHAN RADIO COMPANY, LTD.
Silicon N-channel MOSFET
100 mA, 30 V
• Features
1) Low on-resistance.
2) Fast switching speed.
3) Low voltage drive (2.5V) makes this device ideal for portable equipment.
4) Easily designed drive circuits.
5) Easy to parallel.
• ^ESD>500V
• ^{We declare that the material of product compliance with RoHS requirements.}
• ^{S- Prefix for Automotive and Other Applications Requiring Unique Site and}
Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
MAXIMUM RATINGS
Parameter
Symbol
Limits
Unit
Drain-source voltage
VDSS
30
V
Gate-source voltage
VGSS
±20
V
Continuous
ID
±100
mA
Drain current
Pulsed
IDP^∗1
±400
mA
Total power dissipation (Tc=25°C)
PD^∗2
200
mW
Channel temperature
Tch
150
°C
Storage temperature
Tstg
−55 to +150
°C
∗^{1 Pw≤10µs, Duty cycle≤1%}
∗^{2 With each pin mounted on the recommended lands.}
ORDERING INFORMATION
Device
Marking
Shipping
L2SK3018WT1G _KN
S-L2SK3018WT1G
L2SK3018WT3G
S-L2SK3018WT3G
KN
3000 Tape & Reel
10000 Tape & Reel
L2SK3018WT1G
S-L2SK3018WT1G
3
1
2
SC-70
N - Channel
Drain
Gate
∗ Gate
Protection
Diode
Source
∗A protection diode is included between the gate
and the source terminals to protect the diode
against static electricity when the product is in use.
Use a protection circuit when the fixed voltages
are exceeded.
MARKING DIAGRAM
& PIN ASSIGNMENT
Drain
3
KN
1
2
Gate
Source
KN = Device Code
M
= Month Code
Rev .A 1/5