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L2SD2114KLT1 Datasheet, PDF (1/4 Pages) Leshan Radio Company – Epitaxial planar type NPN silicon transistor | |||
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LESHAN RADIO COMPANY, LTD.
Epitaxial planar type
NPN silicon transistor
zFeatures
1) High DC current gain.
hFE = 1200 (Typ.)
2) High emitter-base voltage.
VEBO =12V (Min.)
3) Low VCE (sat).
VCE (sat) = 0.18V (Typ.)
(IC / IB = 500mA / 20mA)
4) Pb-Free package is available.
L2SD2114K*LT1
3
1
2
SOTâ 23 (TOâ236AB)
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Collector-base voltage
VCBO
Collector-emitter voltage
VCEO
Emitter-base voltage
VEBO
Collector current
IC
Collector power
dissipation
Junction temperature
Storage temperature
â Single pulse Pw=100ms
PC
Tj
Tstg
Limits
25
20
12
0.5
1
0.2
150
â55â¼+150
Unit
V
V
V
A(DC)
A(Pulse) â
W
°C
°C
COLLECTOR
3
1
BASE
2
EMITTER
zElectrical characteristics (Ta=25°C)
Parameter
Symbol Min. Typ. Max. Unit
Conditions
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
BVCBO 25
â
â
BVCEO 20
â
â
BVEBO 12
â
â
ICBO
â
â
0.5
IEBO
â
â
0.5
VCE(sat)
â
0.18 0.4
V IC=10µA
V IC=1mA
V IE=10µA
µA VCB=20V
µA VEB=10V
V IC/IB=500mA/20mA
DC current transfer ratio
Transition frequency
Output capacitance
Output On-resistance
â Measured using pulse current
hFE
820
â 2700 â VCE=3V, IC=10mA
fTâ
â
350
â MHz VCE=10V, IE=â50mA, f=100MHz
Cob
â
8.0
â
pF VCB=10V, IE=0A, f=1MHz
Ron
â
0.8
â
pF IB=1mA, Vi=100mV(rms), f=1kHz
ƽ hFE Values Classification, Device Marking and Ordering Information
Device
hFE
Marking
Shipping
L2SD2114KVLT1
820~1800
BV
3000/Tape&Reel
L2SD2114KVLT1G
820~1800
BV
(Pb-Free)
3000/Tape&Reel
L2SD2114KWLT1
1200~2700
BW
3000/Tape&Reel
L2SD2114KWLT1G
1200~2700
BW
(Pb-Free)
3000/Tape&Reel
L2SD2114K*LT1â1/4
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