L2SC5658QM3T5G_15 Datasheet, PDF (1/5 Pages) Leshan Radio Company – NPN Silicon General Purpose Amplifier Transistor

LESHAN RADIO COMPANY, LTD.
NPN Silicon General
Purpose Amplifier Transistor
This NPN transistor is designed for general purpose amplifier
applications. This device is housed in the SOT-723 package which is
designed for low power surface mount applications, where board
space is at a premium.
Features
• Reduces Board Space
• High h_FE, 210 −460 (typical)
• Low V_CE(sat), < 0.5 V
• ESD Performance: Human Body Model; u 2000 V,
Machine Model; u 200 V
• Available in 8 mm, 7-inch/3000 Unit Tape and Reel
• These are Pb−Free Devices
L2SC5658QM3T5G
L2SC5658RM3T5G
3
2
1
SOT –723
COLLECTOR
3
MAXIMUM RATINGS (T_A = 25°C)
Rating
Symbol
Value
Unit
Collector-Base Voltage
V_(BR)CBO
50
Vdc
Collector-Emitter Voltage
V_(BR)CEO
50
Vdc
Emitter-Base Voltage
V_(BR)EBO
5.0
Vdc
Collector Current − Continuous
I_C
100
mAdc
THERMAL CHARACTERISTICS
Rating
Symbol
Max
Unit
Power Dissipation (Note 1)
P_D
260
mW
Junction Temperature
T_J
150
°C
Storage Temperature Range
T_stg
−55 ~ + 150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Device mounted on a FR-4 glass epoxy printed circuit board using the
minimum recommended footprint.
1
BASE
2
EMITTER
MARKING
DIAGRAM
3
SOT−723
XXM
2
1
XX = Specific Device Code
(QM = L2SC5658QM3T5G
RM = L2SC5658RM3T5G)
M = Date Code
ORDERING INFORMATION
Device
Package
Shipping
L2SC5658QM3T5G SOT−723 8000/Tape & Reel
(Pb−Free)
Rev.O 1/5