L2SC5658M3T5G Datasheet, PDF (1/4 Pages) Leshan Radio Company – General Purpose Amplifier NPN Silicon Transistor

LESHAN RADIO COMPANY, LTD.
General Purpose Amplifier
NPN Silicon Transistor
This NPN transistor is designed for general purpose amplifier
applications. This device is housed in the SOT-723 package which is
designed for low power surface mount applications, where board
space is at a premium.
• Reduces Board Space
• High h_FE, 210 −460 (typical)
• Low V_CE(sat), < 0.5 V
• ESD Performance: Human Body Model; u 2000 V,
Machine Model; u 200 V
• Available in 8 mm, 7-inch/3000 Unit Tape and Reel
• This is a Pb−Free Device
L2SC5658M3T5G
3
2
1
SOT-723
3
COLLECT OR
1
B ASE
MAXIMUM RATINGS (T_{A = 25°C)}
Rating
Symbol
Value
Unit
Collector-Base Voltage
V_(BR)CBO
50
Vdc
Collector-Emitter Voltage
V_(BR)CEO
50
Vdc
Emitter-Base Voltage
V_(BR)EBO
5.0
Vdc
Collector Current − Continuous
I_C
100
mAdc
THERMAL CHARACTERISTICS
Rating
Symbol
Max
Unit
Power Dissipation (Note 1)
P_D
260
mW
Junction Temperature
T_J
150
°C
Storage Temperature Range
T_stg
−55 ~ + 150
°C
1. Device mounted on a FR-4 glass epoxy printed circuit board using the
minimum recommended footprint.
2
EMIT T ER
MARKING
DIAGRAM
XX M
XX = Specific Device Code
M = Date Code
ORDERING INFORMATION
Device
Package
Shipping
L2SC5658M3T5G SOT-723 3000/Tape & Reel
Version 1.0
L2SC5658M3T5G-1/4