L2SC5635WT1G Datasheet, PDF (1/3 Pages) Leshan Radio Company – High-Frequency Amplifier Transistor Can operate at low voltage

LESHAN RADIO COMPANY, LTD.
High-Frequency Amplifier
Transistor
z Features
1.High gain bandwidth product.(Typ.f_T=8.0GHz)
2.High gain,low noise
3.Can operate at low voltage
4.We declare that the material of product compliance with RoHS requirements.
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Parameter
Symbol
Value
Unit
Collector-Base Voltage
VCBO
15
V
Collector-Emitter Voltage
VCEO
6
V
Emitter-base voltage
VEBO
1.5
V
Collector Current
IC
50
mA
Collector power dissipation
PC
150
mW
Junction temperature
Tj
125
°C
Storage temperature
Tstg
-55~+125
°C
DEVICE MARKING
L2SC5635WT1G=HF1
z ORDERING INFORMATION
Device
L2SC5635WT1G
L2SC5635WT3G
Package
SC-70
SC-70
Shipping
3000/Tape & Reel
10000/Tape & Reel
L2SC5635WT1G
3
1
2
SC-70
COLLECTOR
3
1
BASE
2
EMITTER
ELECTRICAL CHARACTERISTICS(TA = 25°C)
Parameter
Symbol Min.
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Transition frequency
Output capacitance
I_CBO
-
I_EBO
-
h_FE
50
f_T
5.0
Cob
-
Insertion power gain
Noise factor
S21 ²
9.0
NF
-
Typ
-
-
-
8.0
1.0
12.0
1.4
Max.
1.0
1.0
250
-
-
-
-
Unit
µA
µA
-
GHz
pF
dB
dB
Conditions
V_CB=10V, I_E=0mA
V_EB= 1 V , I _C=0mA
V_CE=5V, I_C=10mA
V_CE=5V, I_E=10mA
V_CB=5V, I_E=0A, f=1MHz
V CE^{=5V, I}C^{=10A, f=1GHz}
V_CE=5V, I_C=5mA, f=1GHz
Rev.O 1/3