L2SC3838QT1 Datasheet, PDF (1/2 Pages) Leshan Radio Company – High-Frequency Amplifier NPN Transistor

LESHAN RADIO COMPANY, LTD.
High-Frequency Amplifier
NPN Transistor
L6&3838QT1
L2SC3838QT1
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1
2
SC-59
Absolute maximum ratings (Ta=25 ^oC)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol Limits
Unit
V_CBO
20
V
V_CEO
11
V
V_EBO
3
V
I_C
50
mA
P_C
0.2
W
Tj
150
o_C
T_stg
- 55~+150 ^oC
Device Marking
L2SC3838QT1=R25
1
BASE
3
COLLECTOR
2
EMITTER
Electrical characteristics (Ta=25 ^oC)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
Collector-base time constant
Noise factor
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
hFE
fT
Cob
rbb'·Cc
NF
Min.
Typ.
Max.
Unit
Conditions
20
-
-
V
IC = 10 µA
11
-
-
V
IC = 1mA
3
-
-
V
IE = 10 µA
-
-
0.5
uA VCB = 10V,IE=0
-
-
0.5
uA VEB = 2V,IC=0
-
-
0.5
V
IC/IB = 10mA/5mA
120
-
270
-
VCE/IC = 10V/5mA
1.4
3.2
-
GHz VCB = 10V , IC = 10mA , f = 500MHz
-
0.8
1.5
pF VCB = 10V , IE = 0A , f = 1MHz
-
4
12
ps VCB = 10V , IC = 10mA , f = 31.8MHz
-
3.5
-
dB VCE = 6V , IC = 2mA , f = 500MHz , Rg = 50Ω
L2SC3838QT1-1/2