L2SC3838NLT1G_15 Datasheet, PDF (1/2 Pages) Leshan Radio Company – High frequency Amplifier Transistor

LESHAN RADIO COMPANY, LTD.
High-Frequency Amplifier
Transistor
z Features
1.High transition frequency.(Typ.fT=3.2GHz)
2.Small rbb`Cc and high gain.(Typ.4ps)
3.Small NF.
4.We declare that the material of product compliance with RoHS requirements.
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Parameter
Symbol
Value
Unit
Collector-Base Voltage
VCBO
20
V
Collector-Emitter Voltage
VCEO
11
V
Emitter-base voltage
VEBO
3
V
Collector Current
IC
50
mA
Collector power dissipation
PC
0.2
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
-55~+150
°C
DEVICE MARKING
L2SC3838NLT1G=APN
z ORDERING INFORMATION
Device
L2SC3838NLT1G
L2SC3838NLT3G
Package
SOT-23
SOT-23
Shipping
3000/Tape & Reel
10000/Tape & Reel
L2SC3838NLT1G
3
1
2
COLLECTOR
3
1
BASE
2
EMITTER
ELECTRICAL CHARACTERISTICS(TA = 25°C)
Parameter
Symbol Min.
Collector-base breakdown voltage
BV<sub>CBO</sub>
20
Collector-emitter breakdown voltage BV<sub>CEO</sub>
11
Emitter-base breakdown voltage
BV<sub>EBO</sub>
3
Collector cutoff current
I<sub>CBO</sub>
-
Emitter cutoff current
I<sub>EBO</sub>
-
Collector-emitter saturation voltage
V<sub>CE(sat)</sub>
-
DC current transfer ratio
h<sub>FE</sub>
56
Transition frequency
f<sub>T</sub>
1.4
Output capacitance
Cob
-
Collector-base time constant
rbb`Cc
-
Noise factor
NF
-
Typ
Max. Unit Conditions
-
-
V
I_C=10µA
-
-
V
I_C=1mA
-
-
V
I_E=10µA
-
0.5
µA
V_CB=10V
-
0.5
µA
V_EB= 2 V
-
0.5
V
I_C/I_B=10mA/5mA
-
120
-
V_CE/I_C=10V/5mA
3.2
-
GHz V_CE=10V, I_E=-10mA, f=500MHz
0.8
1.5
pF
V_CB=10V, I_E=0A, f=1MHz
4
12
ps
V_CB=10V, I_C=10mA, f=31.8MHz
3.5
-
dB
V_CE=6V, I_C=2mA, f=500MHz,Rg=50Ω
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