L2SC3837LT1G_15 Datasheet, PDF (1/2 Pages) Leshan Radio Company – High frequency Amplifier Transistor

LESHAN RADIO COMPANY, LTD.
High-Frequency Amplifier
Transistor
z Features
1.High transition frequency.(Typ.fT=1.5GHz)
2.Small rbb`Cc and high gain.(Typ.6ps)
3.Small NF.
4.We declare that the material of product compliance with RoHS requirements.
5.S- Prefix for Automotive and Other Applications Requiring Unique Site
and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Parameter
Symbol
Value
Unit
Collector-Base Voltage
VCBO
30
V
Collector-Emitter Voltage
VCEO
18
V
Emitter-base voltage
VEBO
3
V
Collector Current
IC
50
mA
Collector power dissipation
PC
0.2
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
-55~+150
°C
DEVICE MARKING
L2SC3837LT1G;S-L2SC3837LT1G=AP
z ORDERING INFORMATION
Device
L2SC3837LT1G
S-L2SC3837LT1G
L2SC3837LT3G
S-L2SC3837LT3G
Package
SOT-23
SOT-23
Shipping
3000/Tape & Reel
10000/Tape & Reel
L2SC3837LT1G
S-L2SC3837LT1G
3
1
2
SOT-23
COLLECTOR
3
1
BASE
2
EMITTER
ELECTRICAL CHARACTERISTICS(TA = 25°C)
Parameter
Symbol Min.
Collector-base breakdown voltage
BV<sub>CBO</sub>
30
Collector-emitter breakdown voltage BV<sub>CEO</sub>
18
Emitter-base breakdown voltage
BV<sub>EBO</sub>
3
Collector cutoff current
I<sub>CBO</sub>
-
Emitter cutoff current
I<sub>EBO</sub>
-
Collector-emitter saturation voltage
V<sub>CE(sat)</sub>
-
DC current transfer ratio
h<sub>FE</sub>
56
Transition frequency
f<sub>T</sub>
600
Output capacitance
Cob
-
Collector-base time constant
rbb`Cc
-
Noise factor
NF
-
Typ
-
-
-
-
-
-
-
1500
0.9
6
4.5
Max.
-
-
-
0.5
0.5
0.5
180
-
1.5
13
-
Unit
V
V
V
µA
µA
V
-
MHz
pF
ps
dB
Conditions
I_C=10µA
I_C=1mA
I_E=10µA
V_CB=10V
V_EB= 2 V
I_C/I_B=20mA/4mA
V_CE/I_C=10V/10mA
V_CB=10V, I_C=10mA, f=200MHz
V_CB=10V, I_E=0A, f=1MHz
V_CB=10V, I_C=10mA, f=31.8MHz
V_CE=12V, I_C=2mA, f=200MHz,Rg=50Ω
Rev.O 1/2