L2SC3356WT1G Datasheet, PDF (1/4 Pages) Leshan Radio Company – High-Frequency Amplifier Transistor

DATA SHEET
LESHAN RADIO COMPANY, LTD.
DESCRIPTION
The L2SC3356WT1 is an NPN silicon epitaxial transistor designed for
low noise amplifier at VHF, UHF and CATV band.
It has dynamic range and good current characteristic.
L2SC3356WT1G
3
ORDERING INFORMATION
Device
L2SC3356WT1G
L2SC3356WT3G
Marking
24
24
Shipping
3000/Tape & Reel
10000/Tape & Reel
FEATURES
• We declare that the material of product compliance with RoHS requirements.
• Low Noise and High Gain
NF = 1.1 dB TYP., Ga = 11 dB TYP. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz
• High Power Gain
MAG = 13 dB TYP. @VCE = 10 V, IC = 20 mA, f = 1.0 GHz
1
2
SC-70
ABSOLUTE MAXIMUM RATINGS (TA = 25
C)
Collector to Base Voltage
VCBO
20
V
Collector to Emitter Voltage VCEO
12
V
Emitter to Base Voltage
VEBO
3.0
V
Collector Current
IC
100
mA
Total Power Dissipation
PT
150
mW
Junction Temperature
Tj
150

C
Storage Temperature
Tstg
65 to +150
C
ELECTRICAL CHARACTERISTICS (TA = 25
C)
CHARACTERISTIC
SYMBOL MIN. TYP. MAX. UNIT
TEST CONDITIONS
Collector Cutoff Current
ICBO
1.0

A VCB = 10 V, IE = 0
Emitter Cutoff Current
IEBO
1.0

A VEB = 1.0 V, IC = 0
DC Current Gain
hFE
82
170
270
VCE = 3 V, IC = 10 mA
Gain Bandwidth Product
fT
7
GHz VCE = 10 V, IC = 20 mA
Feed-Back Capacitance
Cre**
0.55
1.0
pF VCB = 10 V, IE = 0, f = 1.0 MHz
Insertion Power Gain

S21e
²
11.5
dB VCE = 10 V, IC = 20 mA, f = 1.0 GHz
Noise Figure
NF
1.1
2.0
dB VCE = 10 V, IC = 7 mA, f = 1.0 GHz
* Pulse Measurement PW  350
s, Duty Cycle  2 %
* The emitter terminal and the case shall be connected to the guard terminal of the three-terminal capacitance bridge.
Rev.O 1/4