L2SC2411KRLT1G_15 Datasheet, PDF (1/4 Pages) LANSDALE Semiconductor Inc. – Complementary to L2SA1036K

LESHAN RADIO COMPANY, LTD.
Medium Power Transistor
NPN silicon
FEATURE
ƽEpitaxial planar type
ƽComplementary to L2SA1036K
L2SC2411KQLT1G
Series
S-L2SC2411KQLT1G
Series
ƽWe declare that the material of product are Halogen Free and
compliance with RoHS requirements.
3
ƽS- Prefix for Automotive and Other Applications Requiring Unique Site
and Control Change Requirements; AEC-q101 qualified and PPAP Capable.
DEVICE MARKING AND ORDERING INFORMATION
Device
L2SC2411KQLT1G
S-L2SC2411KQLT1G
L2SC2411KQLT3G
S-L2SC2411KQLT3G
L2SC2411KRLT1G
S-L2SC2411KRLT1G
L2SC2411KRLT3G
S-L2SC2411KRLT3G
Marking
CQ
CQ
CR
CR
Shipping
3000/Tape&Reel
10000/Tape&Reel
3000/Tape&Reel
10000/Tape&Reel
1
2
SOT– 23 (TO–236AB)
3
COLLECTOR
MAXIMUM RATINGS (TA = 25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Limits
40
32
5
0.5
0.2
150
-55~+150
*PC must not be exceeded.
ELECTRICAL CHARACTERISTICS(TA= 25°C)
Parameter
Symbol Min.
Typ
Collector-base breakdown voltage
BV_CBO
40
-
Collector-emitter breakdown voltage
BV_CEO
32
-
Emitter-base breakdown voltgae
BV_EBO
5
-
Collector cutoff current
I_CBO
-
-
Emitter cutoff current
I_EBO
-
-
DC current transfer ratio
h_FE
120
-
Collcetor-emitter saturation voltage
V_CE(sat)
-
-
Transition frequency
f_T
-
250
Output capacitance
C_ob
-
6.0
hFE values are classified as follows:
Item
QR
hFE
120~270 180~390
Unit
V
V
V
A*
W
°C
°C
Max.
-
-
-
1
1
390
0.4
-
-
Unit
V
V
V
µA
µA
-
V
MHz
pF
1
BASE
2
EMITTER
Conditions
I_C=100µA
I_C=1mA
I_E=100µA
V_CB=20V
V_EB=4V
V_CE=3V ,I_C =100mA
I_C/I_B=500mA/50mA
V_CE=5V,I_E=-20mA,f=100MHz
V_CB=10V,I_E=0A,f=1MHz
Rev.O 1/4