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L2SC1623SWT1G_15 Datasheet, PDF (1/4 Pages) Leshan Radio Company – General Purpose Transistors
LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
Pb-Free packk age is available
DEVICE MARKING AND ORDERING INFORMATION
Device
Marking
Shipping
L2SC1623SWT1G
L7
3000/Tape&Reel
L2SC1623SWT3G
L7
10000/Tape&Reel
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector current-continuoun
Symbol
VCEO
VCBO
VEBO
IC
THERMAL CHARATEERISTICS
Characteristic
Total Device Dissipation FR-5 Board, (1)
TA=25oC
Derate above 25oC
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) TA=25 oC
Derate above 25oC
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Value
50
60
7
150
Unit
V
V
V
mAdc
Symbol
PD
R θJA
PD
R θJA
Tj ,Tstg
Max
150
1.2
833
200
1.6
625
-55 to +150
Unit
mW
mW/oC
oC/W
mW
mW/oC
oC/W
oC
L2SC1623SWT1G
3
1
2
SC-70
1
BASE
3
COLLECTOR
2
EMITTER
ELECTRICAL CHARACTERISTICS (TA=25oC unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector Cutoff Current (VCB=60V)
Emitter Cutoff Current (VBE=5V)
I CBO
I EBO
-
-
0.1
µA
0.1
µA
ON CHARACTERISTICS
DC Current Gain
(IC=1.0mA, VCE=6V)
Collector-Emitter Saturation Voltage
(IC=100mA,IB=10mA)
Base-Emitter Saturation Voltage
(IC=100mA,IB=10mA)
Base -Emitter On Voltage
IC=1mA,VCE=6.0V)
SMALL-SIGNAL CHARACTERISTICS
Current-Gain-Bandwidth Product
(VCE=6.0V,IE =-10mA)
Output Capacitance(VCE = 6V, IE=0, f=1.0MHz)
hFE
V CE(sat)
VBE(sat)
V BE
270
-
-
0.55
Ft
-
Cob
-
-
560
0.15
0.3
V
0.86
1.0
V
0.62 0.65
V
250
-
3
-
MHz
Pf
Rev. O 1/4