L2SB882Q Datasheet, PDF (1/2 Pages) Leshan Radio Company – PNP SURFACE MOUNT TRANSISTOR

LESHAN RADIO COMPANY, LTD.
PNPSURFACEMOUNTTRANSISTOR
ƽ We declare that the material of product compliance with RoHS requirements.
L2SB882Q
L2SB882P
DEVICE MARKING AND ORDERING INFORMATION
Device
Marking
Shipping
L2SB882Q
82Q
2500/Tape&Reel
L2SB882P
82P
2500/Tape&Reel
MAXIMUM RATINGS(Ta=25qC)
Parameter
Symbol
Limits
Unit
Collector-base voltage
VCBO
40
V
Collector-emitter voltage
VCEO
30
V
Emitter-base voltage
VEBO
6
V
Peak Pulse Current
ICM
3
A
Collector power dissipation
PC
0.5
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to 150
°C

4
1
2
3
SOT-89
1
BASE
2,4
COLLECTOR
3
EMITTER
ELECTRICAL CHARACTERISTICS(Ta=25qC)
Parameter
Symbol Min.
Collector-base breakdown voltage BVCBO 40
Collector-emitter breakdown voltage BVCEO 30
Emitter-base breakdown voltage
Collector cutoff current
BVEBO
6
ICBO
−
Collector cutoff current
ICEO
−
Emitter cutoff current
IEBO
−
Collector-emitter saturation voltage VCE(sat) −
Base-emitter saturation voltage
VBE(sat)
−
DC current transfer ratio
h FE(1)
100
DC current transfer ratio
hFE
32
Transition frequency
fT
50
Typ.
−
−
−
−
−
−
−
−
−
−
−
Max.
−
−
−
1
10
1
0.5
1.5
320
−
−
Unit
V
V
V
µA
µA
µA
V
V
−
−
MHz
Conditions
IC= 100µA
IC= 10mA
IE= 100µA
VCB= 40V
VCB= 30V
VEB= 6V
IC/IB= 2A/ 0.2A
IC/IB= 2A/ 0.2A
VCE= 2V, IC= 1A
VCE= 2V, IC= 100mA
VCE= 5V, I E=0.1A, f =10MHz
h_FE(1) values are classified as follows :
Item(*)
Q
h_FE
100~200
P
160~320
Rev.O 1/2