L2SB772Q Datasheet, PDF (1/2 Pages) Leshan Radio Company – PNP SURFACE MOUNT TRANSISTOR

LESHAN RADIO COMPANY, LTD.
PNPSURFACEMOUNTTRANSISTOR
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L2SB772Q
L2SB772P
DEVICE MARKING AND ORDERING INFORMATION
Device
Marking
Shipping
L2SB772Q
72Q
2500/Tape&Reel
L2SB772P
72P
2500/Tape&Reel
MAXIMUM RATINGS(Ta=25qC)
Parameter
Symbol
Limits
Unit
Collector-base voltage
VCBO
−40
V
Collector-emitter voltage
VCEO
−30
V
Emitter-base voltage
VEBO
−6
V
Peak Pulse Current
ICM
−3
A
Collector power dissipation
PC
0.5
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to 150
°C

4
1
2
3
SOT-89
1
BASE
2,4
COLLECTOR
3
EMITTER
ELECTRICAL CHARACTERISTICS(Ta=25qC)
Parameter
Symbol Min.
Collector-base breakdown voltage BVCBO −40
Collector-emitter breakdown voltage BVCEO −30
Emitter-base breakdown voltage
BVEBO −6
Collector cutoff current
ICBO
−
Collector cutoff current
ICEO
−
Emitter cutoff current
IEBO
−
Collector-emitter saturation voltage VCE(sat) −
Base-emitter saturation voltage
VBE(sat)
−
DC current transfer ratio
h FE(1)
100
DC current transfer ratio
hFE
32
Transition frequency
fT
50
Typ.
−
−
−
−
−
−
−
−
−
−
−
Max.
−
−
−
−1
−10
−1
−0.5
−1.5
320
−
−
Unit
V
V
V
µA
µA
µA
V
V
−
−
MHz
Conditions
IC= −100µA
IC= −10mA
IE= −100µA
VCB= −40V
VCB= −30V
VEB= −6V
IC/IB= −2A/−0.2A
IC/IB= −2A/−0.2A
VCE= −2V, IC= −1A
VCE= −2V, IC= −100mA
VCE= −5V, IE=-0.1A, f =10MHz
h_FE(1) values are classified as follows :
Item(*)
Q
h_FE
100~200
P
160~320
Rev.O 1/2