L2SB1197KQLT1G_11 Datasheet, PDF (1/3 Pages) Leshan Radio Company – Low Frequency Transistor PNP Silicon

LESHAN RADIO COMPANY, LTD.
Low Frequency Transistor
PNP Silicon
L2SB1197KQLT1G Series
FEATURE
ƽHigh current capacity in compact package.
I_C = í0.8A.
ƽEpitaxial planar type.
ƽNPN complement: L2SD1781K
ƽWe declare that the material of product compliance with RoHS requirements.
3
1
2
SOT– 23 (TO–236AB)
DEVICE MARKING AND ORDERING INFORMATION
Device
Marking
Shipping
L2SB1197KQLT1G
AHQ
3000/Tape&Reel
3
COLLECTOR
L2SB1197KQLT3G
L2SB1197KRLT1G
AHQ
AHR
10000/Tape&Reel
3000/Tape&Reel
1
BASE
L2SB1197KRLT3G
AHR
10000/Tape&Reel
MAXIMUM RATINGS(Ta=25qC)
Parameter
Symbol
Limits
Unit
Collector-base voltage
VCBO
−40
V
Collector-emitter voltage
VCEO
−32
V
Emitter-base voltage
VEBO
−5
V
Collector current
IC
−0.8
A
Collector power dissipation
PC
0.2
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to 150
°C
ELECTRICAL CHARACTERISTICS(Ta=25qC)
Parameter
Symbol Min.
Collector-base breakdown voltage BVCBO −40
Collector-emitter breakdown voltage BVCEO −32
Emitter-base breakdown voltage
BVEBO −5
Collector cutoff current
ICBO
−
Emitter cutoff current
IEBO
−
Collector-emitter saturation voltage VCE(sat) −
DC current transfer ratio
hFE
120
Transition frequency
fT
−
Output capacitance
Cob
−
Typ. Max. Unit
−
−
V
−
−
V
−
−
V
− −0.5 µA
− −0.5 µA
− −0.5
V
−
390
−
200
− MHz
12 30 pF
h_FE values are classified as follows :
Item(*)
Q
hFE
120~270
R
180~390
2
EMITTER
Conditions
IC= −50µA
IC= −1mA
IE= −50µA
VCB= −20V
VEB= −4V
IC/IB= −0.5A/ −50mA
VCE= −3V, IC= −100mA
VCE= −5V, IE=50mA, f=100MHz
VCB= −10V, IE=0A, f=1MHz
Rev.O 1/3